Gas Phase Chemistry in Gallium Nitride CVD: Theoretical Determination of the Arrhenius Parameters for the First Ga−C Bond Homolysis of Trimethylgallium-Reference-Cited by-同舟云学术

Gas Phase Chemistry in Gallium Nitride CVD: Theoretical Determination of the Arrhenius Parameters for the First Ga−C Bond Homolysis of Trimethylgallium

Published:2005-02-24 Issue:11 Volume:109 Page:2623-2630
ISSN:1089-5639
Container-title:The Journal of Physical Chemistry A
language:en
Short-container-title:J. Phys. Chem. A

Author:

Schmid Rochus¹,Basting Daniel¹

Affiliation:

1. Lehrstuhl für Anorganische Chemie II, Organometallics and Materials Chemistry, Ruhr-Universität Bochum, D-44780 Bochum, Germany, and Abt. Membranbiophysik & FK-NMR, Institut für Biophysikalische Chemie, J. W. Goethe Universität, Marie-Curie-Str. 9, D-60439 Frankfurt am Main, Germany

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp045343o

Reference43 articles.

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2. Novel metalorganic chemical vapor deposition system for GaN growth

3. Nakamura, S.; Sakai, S. InJpn. Kokai Tokkyo Koho; Nichia KagakuKogyo K. K. Tokyo, 1991, p 8.

4. Does the Ring Compound [(CH3)2GaNH2]3 Form during MOVPE of Gallium Nitride? Investigations via Density Functional and Reaction Rate Theories

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