Analysis of the Gas Phase Kinetics Active during GaN Deposition from NH3 and Ga(CH3)3-Reference-Cited by-同舟云学术

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Analysis of the Gas Phase Kinetics Active during GaN Deposition from NH3 and Ga(CH3)3

Published:2015-05-11 Issue:28 Volume:119 Page:7858-7871
ISSN:1089-5639
Container-title:The Journal of Physical Chemistry A
language:en
Short-container-title:J. Phys. Chem. A

Author:

Ravasio Stefano¹,Momose Takeshi²,Fujii Katsushi³,Shimogaki Yukihiro²,Sugiyama Masakazu³,Cavallotti Carlo¹

Affiliation:

1. Dipartimento di Chimica, Materiali e Ingegneria Chimica “Giulio Natta”, Politecnico di Milano, via Mancinelli 7, 20131 Milano, Italy

2. Department of Materials Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan

3. School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpca.5b01425

Reference60 articles.

1. Metal organic vapour phase epitaxy of AlN, GaN, InN and their alloys: A key chemical technology for advanced device applications

2. A reaction-transport model for AlGaN MOVPE growth

3. Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors

4. Investigation of nitride MOVPE at high pressure and high growth rates in large production reactors by a combined modelling and experimental approach

5. Examination of intermediate species in GaN metal-organic vapor-phase epitaxy by selective-area growth

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1. Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy;Applied Physics Letters;2022-10-17

2. Theoretical study on the effect of H2 and NH3 on trimethylgallium decomposition process in GaN MOVPE;Japanese Journal of Applied Physics;2021-04-01

3. Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE;Crystal Growth & Design;2021-02-01

4. Progress in Modeling of III-Nitride MOVPE;Progress in Crystal Growth and Characterization of Materials;2020-08

5. Suppressing the Initial Growth of Sidewall GaN by Modifying AlN-Coated Patterned Sapphire with KOH-Based Etchant;ECS Journal of Solid State Science and Technology;2019-10-29

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