Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors-Reference-Cited by-同舟云学术

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Modeling and process design of III-nitride MOVPE at near-atmospheric pressure in close coupled showerhead and planetary reactors

Published:2007-01 Issue: Volume:298 Page:418-424
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Dauelsberg M.,Martin C.,Protzmann H.,Boyd A.R.,Thrush E.J.,Käppeler J.,Heuken M.,Talalaev R.A.,Yakovlev E.V.,Kondratyev A.V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference19 articles.

1. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes

2. High temperature adduct formation of trimethylgallium and ammonia

3. Computational chemistry predictions of reaction processes in organometallic vapor phase epitaxy

4. Nature of the parasitic chemistry during AlGaInN OMVPE

5. The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition

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1. High‐pressure MOCVD growth of InGaN thick films toward the photovoltaic applications;Fundamental Research;2021-12

2. Simulation and experimental verification study on the process parameters of ZnO-MOCVD;Ceramics International;2021-06

3. Influence of inlet structures of planetary reactor on gas reaction path in AlN-MOVPE process;Journal of Crystal Growth;2021-01

4. GaN‐Based Materials;Nitride Semiconductor Technology;2020-08-03

5. Environmental impacts of III–V/silicon photovoltaics: life cycle assessment and guidance for sustainable manufacturing;Energy & Environmental Science;2020

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