Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2-Reference-Cited by-同舟云学术

Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2

Published:2018-05-17 Issue:11 Volume:30 Page:3628-3632
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Moody Michael J.¹,Henning Alex¹^ORCID,Jurca Titel²^ORCID,Shang Ju Ying¹,Bergeron Hadallia¹,Balla Itamar¹^ORCID,Olding Jack N.³^ORCID,Weiss Emily A.¹²^ORCID,Hersam Mark C.¹²⁴⁵^ORCID,Lohr Tracy L.²,Marks Tobin J.¹²^ORCID,Lauhon Lincoln J.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States

2. Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States

3. Graduate Program in Applied Physics, Northwestern University, Evanston, Illinois 60208, United States

4. Department of Medicine, Northwestern University, Evanston, Illinois 60208, United States

5. Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208, United States

Funder

Division of Emerging Frontiers in Research and Innovation

National Institute of Standards and Technology

Deutsche Forschungsgemeinschaft

Natural Sciences and Engineering Research Council of Canada

Northwestern University

National Science Foundation

Division of Materials Research

International Institute for Nanotechnology, Northwestern University

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.8b01171

Reference40 articles.

1. Degenerate n-Doping of Few-Layer Transition Metal Dichalcogenides by Potassium

2. Solution-Processed Doping of Trilayer WSe2 with Redox-Active Molecules

3. Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation

4. Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2

5. Sub-10 nm Tunable Hybrid Dielectric Engineering on MoS2 for Two-Dimensional Material-Based Devices

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