Solution-Processed Doping of Trilayer WSe2 with Redox-Active Molecules-Reference-Cited by-同舟云学术

Solution-Processed Doping of Trilayer WSe2 with Redox-Active Molecules

Published:2017-08-25 Issue:17 Volume:29 Page:7296-7304
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Tsai Meng-Yen¹,Zhang Siyuan¹,Campbell Philip M.¹,Dasari Raghunath R.¹^ORCID,Ba Xiaochu¹,Tarasov Alexey¹^ORCID,Graham Samuel¹,Barlow Stephen¹^ORCID,Marder Seth R.¹^ORCID,Vogel Eric M.¹^ORCID

Affiliation:

1. School of Materials Science and Engineering, ‡Center for Organic Photonics and Electronics and School of Chemistry and Biochemistry, and §The George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States

Funder

U.S. Department of Defense

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.7b01998

Reference37 articles.

1. Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2

2. Highly Uniform Trilayer Molybdenum Disulfide for Wafer-Scale Device Fabrication