Area-Selective Deposition by Cyclic Adsorption and Removal of 1-Nitropropane
Author:
Affiliation:
1. Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States
2. Department of Energy Science and Engineering, Stanford University, Stanford, California 94305, United States
Funder
Merck KGaA
Publisher
American Chemical Society (ACS)
Subject
Physical and Theoretical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.jpca.3c04339
Reference54 articles.
1. Area-Selective Deposition: Fundamentals, Applications, and Future Outlook
2. Felix, N.; Corliss, D.; Petrillo, K.; Saulnier, N.; Xu, Y.; Meli, L.; Tang, H.; Silva, A. D.; Hamieh, B.; Burkhardt, M. In EUV Patterning Successes and Frontiers, Extreme Ultraviolet (EUV) Lithography VII; SPIE, 2016; pp 480–486.
3. Levinson, H. J.; Brunner, T. A. In Current Challenges and Opportunities for EUV Lithography, International Conference on Extreme Ultraviolet Lithography; Ronse, K. G.; Gargini, P. A.; Hendrickx, E.; Naulleau, P. P.; Itani, T., Eds. SPIE: Monterey, United States, 2018.
4. Ronse, K.; De Bisschop, P.; Vandenberghe, G.; Hendrickx, E.; Gronheid, R.; Pret, A. V.; Mallik, A.; Verkest, D.; Steegen, A. In Opportunities and Challenges in Device Scaling by the Introduction of EUV Lithography, 2012 International Electron Devices Meeting; IEEE: San Francisco, CA, USA, 2012.
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