EUV patterning successes and frontiers-Reference-Cited by-同舟云学术

EUV patterning successes and frontiers

Published:2016-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Extreme Ultraviolet (EUV) Lithography VII
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Author:

Felix Nelson¹,Corliss Dan¹,Petrillo Karen¹,Saulnier Nicole¹,Xu Yongan¹,Meli Luciana¹,Tang Hao¹,De Silva Anuja¹,Hamieh Bassem¹,Burkhardt Martin¹,Mignot Yann¹,Johnson Richard¹,Robinson Chris¹,Breton Mary¹,Seshadri Indira¹,Dunn Derren¹,Sieg Stuart¹,Miller Eric¹,Beique Genevieve²,Labonte Andre²,Sun Lei²,Han Geng²,Verduijn Erik²,Han Eunshoo³,Kim Bong Cheol³,Kim Jongsu³,Hontake Koichi⁴,Huli Lior⁴,Lemley Corey⁴,Hetzer Dave⁴,Kawakami Shinichiro⁴,Matsunaga Koichi⁴

Affiliation:

1. IBM Corp. (United States)

2. GLOBALFOUNDRIES Inc. (United States)

3. SAMSUNG Electronics Co., Ltd. (United States)

4. TEL Technology Ctr., America, LLC (United States)

Publisher

SPIE

Reference8 articles.

1. Intel’s EUV resist development;Cao,2003

2. Evaluation of EUV resist materials for use at the 32 nm half-pitch node;Wallow,2008

3. The use of EUV lithography to produce demonstration devices;LaFontaine,2008

4. Shearer, J., et al., 61st AVS Symposium, (2014).

5. Trench and hole patterning with EUV resists using dual frequency capacitively coupled plasma (CCP);Feurprier,2015

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