A Route to MoO2 film fabrication via atomic layer deposition using Mo(IV) precursor and oxygen reactant for DRAM applications

Author:

Yoon Ara,Yang Hae Lin,Lee Sanghoon,Lee Seunghwan,Kim Beomseok,Jung Changhwa,Lim HanjinORCID,Park Jin-SeongORCID

Funder

Samsung

Publisher

Elsevier BV

Reference44 articles.

1. Atomic layer deposition-based interface engineering for high-k/metal gate stacks;Ostling,2012

2. Understanding the energy consumption of dynamic random access memories;Vogelsang,2010

3. Toward advanced high-k and electrode thin films for DRAM capacitors via atomic layer deposition;Kim;Adv. Mater. Technol.,2022

4. Recent advances in the understanding of high-k dielectric materials deposited by atomic layer deposition for dynamic random-access memory capacitor applications;Jeon;J. Mater. Res.,2020

5. Plasma-enhanced atomic layer deposited HfO2 films using a novel heteroleptic cyclopentadienyl-based Hf precursor;hoon Baek;Ceram. Int.,2021

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