Self-Aligned Nanopatterning and Controlled Lateral Growth by Dual-Material Orthogonal Area-Selective Deposition of Poly(3,4-ethylenedioxythiophene) and Tungsten-Reference-Cited by-同舟云学术

Self-Aligned Nanopatterning and Controlled Lateral Growth by Dual-Material Orthogonal Area-Selective Deposition of Poly(3,4-ethylenedioxythiophene) and Tungsten

Published:2023-05-22 Issue:11 Volume:35 Page:4375-4384
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Oh Hwan¹^ORCID,Kim Jung-Sik¹^ORCID,Margavio Hannah R. M.¹^ORCID,Parsons Gregory N.¹^ORCID

Affiliation:

1. Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States

Funder

Semiconductor Research Corporation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.chemmater.3c00530

Reference41 articles.

1. Perspective: New process technologies required for future devices and scaling

2. Area-Selective Atomic Layer Deposition: Conformal Coating, Subnanometer Thickness Control, and Smart Positioning

3. From the Bottom-Up: Toward Area-Selective Atomic Layer Deposition with High Selectivity

4. Area-Selective Deposition: Fundamentals, Applications, and Future Outlook

5. Overlay and edge placement control strategies for the 7nm node using EUV and ArF lithography

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