Funder
National Key Research and Development Program of China
Reference38 articles.
1. A review of the gate-all-around nanosheet FET process opportunities;Mukesh;Electronics (Basel),2022
2. Nanosheet field effect transistors-A next generation device to keep Moore's law alive: an intensive study;Ajayan;Microelectronics J,2021
3. A comprehensive review on FinFET, Gate all around, tunnel FET: concept, performance and challenges;Narula,2022
4. The role of self-assembled monolayers in electronic devices;Singh;J. Mater. Chem. C,2020
5. Molecular approach to engineer two-dimensional devices for CMOS and beyond-CMOS applications;Zhao;Chem. Rev.,2021
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献