Probing Crystal Dislocations in a Micrometer-Thick GaN Film by Modern High-Voltage Electron Microscopy-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Probing Crystal Dislocations in a Micrometer-Thick GaN Film by Modern High-Voltage Electron Microscopy

Published:2018-10-18 Issue:10 Volume:3 Page:13524-13529
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Sato Kazuhisa¹²^ORCID,Yasuda Hidehiro¹²^ORCID

Affiliation:

1. Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

2. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acsomega.8b02078

Reference25 articles.

1. Breakthroughs in Improving Crystal Quality of GaN and Invention of the p–n Junction Blue-Light-Emitting Diode

2. Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry

3. Three-dimensional analysis of dislocation networks in GaN using weak-beam dark-field electron tomography

4. Metallurgical Investigations with a 500 kV Electron Microscope

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Advances in Characterization of Thick Specimens and Time-Resolved <i>In-situ</i> Observation by Modern High Voltage Electron Microscopy;Materia Japan;2024-04-01

2. Origin of spurious intensity in vacuum near sample edge in bright field TEM images;Micron;2022-11

3. Domain switching dynamics in relaxor ferroelectric Pb(Mg1/3Nb2/3)O3–PbTiO3 revealed by time-resolved high-voltage electron microscopy;Journal of Applied Physics;2021-10-28

4. Electron tomography imaging methods with diffraction contrast for materials research;Microscopy;2020-03-02

5. Athermal Crystal Defect Dynamics in Si Revealed by Cryo-High-Voltage Electron Microscopy;ACS Omega;2020-01-08

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3