Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry-Reference-Cited by-同舟云学术

Analysis of contrasts and identifications of Burgers vectors for basal-plane dislocations and threading edge dislocations in 4H-SiC crystals observed by monochromatic synchrotron X-ray topography in grazing-incidence Bragg-case geometry

Published:2012-12-21 Issue:36 Volume:92 Page:4599-4617
ISSN:1478-6435
Container-title:Philosophical Magazine
language:en
Short-container-title:Philosophical Magazine

Author:

Matsuhata Hirofumi,Yamaguchi Hirotaka,Ohno Toshiyuki

Publisher

Informa UK Limited

Subject

Condensed Matter Physics

Link

http://www.tandfonline.com/doi/pdf/10.1080/14786435.2012.716168

Reference17 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

2. Direct observation of dislocations propagated from 4H–SiC substrate to epitaxial layer by X-ray topography

3. Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer

4. Observation of Misfit Dislocations Introduced by Epi-Layer Growth on 4H-SiC

5. Contrast of Basal Plane and Threading Edge Dislocations in 4H-SiC by X-Ray Topography in Grazing Incidence Geometry

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