Influence of growth conditions on basal plane dislocation in 4H-SiC epitaxial layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference14 articles.
1. White-beam synchrotron topographic studies of defects in 6H-SiC single crystals
2. Origin of domain structure in hexagonal silicon carbide boules grown by the physical vapor transport method
3. X-ray topographic studies of SiC crystals grown from vapour phase
4. Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals
5. Nature and occurrence of defects in 6H-SiC Lely crystals
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