Origin of domain structure in hexagonal silicon carbide boules grown by the physical vapor transport method
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices
2. SiC Power Devices
3. Silicon Carbide And Gallium Nitride Rf Power Devices
4. High Voltage Silicon Carbide Devices
5. Silicon Carbide High Frequency Devices
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