Micro- and Macro-domain Analysis of Whole Silicon Carbide Wafers by T-ray Imaging: AM: Advanced Metrology
Author:
Affiliation:
1. Applied Research & Photonics, Inc.,Harrisburg,PA,17111
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10545359/10545360/10545525.pdf?arnumber=10545525
Reference12 articles.
1. Silicon Carbide as a Platform for Power Electronics
2. Origin of domain structure in hexagonal silicon carbide boules grown by the physical vapor transport method
3. Growth of silicon carbide: process-related defects
4. T-ray Wavelength Decoupled Imaging and Profile Mapping of a Whole Wafer for Die Sorting and Analysis
5. Evolution of domain walls in 6H- and 4H-SiC single crystals
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