Evolution of domain walls in 6H- and 4H-SiC single crystals
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference7 articles.
1. Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial Layers
2. Origin of domain structure in hexagonal silicon carbide boules grown by the physical vapor transport method
3. Influence of different growth parameters and related conditions on 6H-SiC crystals grown by the modified Lely method
4. Capillary equilibria of dislocated crystals
5. Trans Tech Publications Ltd., Switzerland;Yakimova;Mater. Sci. Forum,1998
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