Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC
Author:
Affiliation:
1. Linköping University
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Link
https://www.scientific.net/MSF.264-268.159.pdf
Cited by 28 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Texture evolution in rhombohedral boron carbide films grown on 4H-SiC(0001̄) and 4H-SiC(0001) substrates by chemical vapor deposition;Dalton Transactions;2022
2. Synthesis and Growth of 6H-SiC and 3C-SiC in an Al–Si–C System at 820 °C: Effect of the Reaction Path on the SiC Polytype;Crystal Growth & Design;2020-01-07
3. Investigation of the Growth Kinetics of SiC Crystals during Physical Vapor Transport Growth by the Application of In Situ 3D Computed Tomography Visualization;Advanced Engineering Materials;2019-09-30
4. Polytype inclusions and polytype stability in silicon-carbide crystals;Semiconductors;2016-04
5. Cubic SiC formation on the C-face of 6H–SiC (0001) substrates;Journal of Crystal Growth;2012-06
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