Athermal Crystal Defect Dynamics in Si Revealed by Cryo-High-Voltage Electron Microscopy-Reference-Cited by-同舟云学术

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Athermal Crystal Defect Dynamics in Si Revealed by Cryo-High-Voltage Electron Microscopy

Published:2020-01-08 Issue:3 Volume:5 Page:1457-1462
ISSN:2470-1343
Container-title:ACS Omega
language:en
Short-container-title:ACS Omega

Author:

Sato Kazuhisa¹²^ORCID,Yasuda Hidehiro¹²^ORCID

Affiliation:

1. Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, 7-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan

2. Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.acs.org/doi/pdf/10.1021/acsomega.9b03028

Reference31 articles.

1. Ultra-high voltage electron microscopy: Past, present, and future

2. Four generations of high-voltage electron microscopes

3. Topics in recent studies with high-voltage electron microscopes

4. Fast in Situ Ultrahigh-Voltage Electron Microscopy Observation of Crystal Nucleation and Growth in Amorphous Antimony Nanoparticles

5. Fluctuation of long-range order in Co-Pt alloy nanoparticles revealed by time-resolved electron microscopy

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1. Advances in Characterization of Thick Specimens and Time-Resolved <i>In-situ</i> Observation by Modern High Voltage Electron Microscopy;Materia Japan;2024-04-01

2. Experimental evaluation of usable specimen thickness of Si for lattice imaging by transmission electron microscopy at 300 kV;Ultramicroscopy;2024-02

3. Domain switching dynamics in relaxor ferroelectric Pb(Mg1/3Nb2/3)O3–PbTiO3 revealed by time-resolved high-voltage electron microscopy;Journal of Applied Physics;2021-10-28

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