Experimental evaluation of usable specimen thickness of Si for lattice imaging by transmission electron microscopy at 300 kV-Reference-Cited by-同舟云学术

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Experimental evaluation of usable specimen thickness of Si for lattice imaging by transmission electron microscopy at 300 kV

Published:2024-02 Issue: Volume:256 Page:113876
ISSN:0304-3991
Container-title:Ultramicroscopy
language:en
Short-container-title:Ultramicroscopy

Author:

Kobayashi Keita^ORCID,Kizu Ryosuke

Funder

Nippon Telegraph and Telephone

National Institute of Advanced Industrial Science and Technology

Japan Society for the Promotion of Science

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Elsevier BV

Subject

Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. High-resolution electron microscopy of crystal lattice of titanium-niobium oxide;Iijima;J. Appl. Phys.,1971

2. High voltage electron microscopy for image discrimination of constituent atoms in crystals and molecules;Uyeda;Chem. Scr.,1978

3. Direct evidence for atomic defects in graphene layers;Hashimoto;Nature,2004

4. Structural instability of ultrafine particles of metals;Iijima;Phys. Rev. Lett.,1986

5. Visualizing gas molecules interacting with supported nanoparticulate catalysts at reaction conditions;Yoshida;Science,2012

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