Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers-Reference-Cited by-同舟云学术

Growth of Conductive SrRuO3 Films by Combining Atomic Layer Deposited SrO and Chemical Vapor Deposited RuO2 Layers

Published:2012-12-11 Issue:24 Volume:24 Page:4686-4692
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Han Jeong Hwan¹,Lee Woongkyu¹,Jeon Woojin¹,Lee Sang Woon¹,Hwang Cheol Seong¹,Ko Changhee²,Gatineau Julien²

Affiliation:

1. WCU Hybrid Materials Program, Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea

2. Air Liquide, 28, Wadai, Tsukuba-Shi, Ibaraki Pref., 300-4247, Japan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm302470k

Reference27 articles.

1. International Technology Roadmap for Semiconductors (ITRS), 2011 Edition;European Semiconductor Industry Association (ESIA), Japan Electronics and Information Technology Industries Association (JEITA), Korean Semiconductor Industry Association (KSIA), Taiwan Semiconductor Industry Association (TSIA), and United States Semiconductor Industry Association (SIA).:Belgium, Japan, Korea, Taiwan, and United States, 2011.

2. Characteristics of single crystal “thin film” capacitor structures made using a focused ion beam microscope

3. Characteristics of Polycrystalline SrRuO[sub 3] Thin-Film Bottom Electrodes for Metallorganic Chemical-Vapor-Deposited Pb(Zr[sub 0.2]Ti[sub 0.8])O[sub 3] Thin Films

4. Epitaxial SrRuO3 thin films on (001) SrTiO3

5. Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode

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