Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode-Reference-Cited by-同舟云学术

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Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode

Published:2011-07-11 Issue:2 Volume:99 Page:022901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Han Jeong Hwan,Han Sora,Lee Woongkyu,Lee Sang Woon,Kim Seong Keun,Gatineau Julien,Dussarrat Christian,Hwang Cheol Seong

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3609875

Reference10 articles.

1. High dielectric constant TiO2 thin films on a Ru electrode grown at 250 °C by atomic-layer deposition

2. Plasma-Enhanced Atomic Layer Deposition of TiO[sub 2] and Al-Doped TiO[sub 2] Films Using N[sub 2]O and O[sub 2] Reactants

3. Growth of High-Dielectric-Constant TiO[sub 2] Films in Capacitors with RuO[sub 2] Electrodes

4. Capacitors with an Equivalent Oxide Thickness of <0.5 nm for Nanoscale Electronic Semiconductor Memory

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