Dielectric Surface Charge Engineering for Electrostatic Doping of Graphene-Reference-Cited by-同舟云学术

Dielectric Surface Charge Engineering for Electrostatic Doping of Graphene

Published:2020-04-21 Issue:5 Volume:2 Page:1235-1242
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Wittmann Sebastian¹²^ORCID,Aumer Fabian¹,Wittmann Doris¹,Pindl Stephan¹,Wagner Stefan³,Gahoi Amit²,Reato Eros²³,Belete Melkamu²,Kataria Satender²^ORCID,Lemme Max C.²³^ORCID

Affiliation:

1. Infineon Technologies AG, Wernerwerkstrasse 2, 93049 Regensburg, Germany

2. Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Straße 2, 52074 Aachen, Germany

3. AMO GmbH, Otto-Blumenthal-Straße 25, 52074 Aachen, Germany

Funder

Bundesministerium f??r Bildung und Forschung

Deutsche Forschungsgemeinschaft

H2020 Future and Emerging Technologies

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

http://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00051

Reference63 articles.

1. New directions in science and technology: two-dimensional crystals

2. High-frequency self-aligned graphene transistors with transferred gate stacks

3. 200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors

4. Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors

5. Large scale integration of CVD-graphene based NEMS with narrow distribution of resonance parameters

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