Abstract
Abstract
Engineering the doping level in graphene is essential to realizing functional electronic and optoelectronic devices. While achieving strong p-doping is relatively straightforward, electrostatic or chemical approaches to negatively dope graphene have yielded electron densities (ns
) of −9.5 × 1012 cm−2 or below. In this work, we demonstrate very high ns
(−1013 to −1014 cm−2) in graphene, on an ion-exchanged glass substrate, which is widely used in touch screen displays (e.g. smart phones). Moreover, the proposed method, which is easy to implement and scalable, leads to relatively stable graphene doping, with about a 40% increase in sheet resistance over 5 months at ambient conditions.
Funder
Fundació Mir-Puig
Horizon 2020 Framework Programme
Fundación Cellex
TUNA-SURF
Ministerio de Economía y Competitividad
Agència de Gestió d’Ajuts Universitaris i de Recerca
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry