Mass Inversion at the Lifshitz Transition in Monolayer Graphene by Diffusive, High-Density, On-Chip Doping-Reference-Cited by-同舟云学术

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Mass Inversion at the Lifshitz Transition in Monolayer Graphene by Diffusive, High-Density, On-Chip Doping

Published:2024-03-13 Issue:12 Volume:18 Page:9092-9099
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Aygar Ayse Melis¹,Durnan Oliver²,Molavi Bahar¹^ORCID,Bovey Sam N. R.¹,Grüneis Alexander³^ORCID,Szkopek Thomas¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, McGill University, Québec, Montréal H3A-0E9, Canada

2. Department of Electrical Engineering, Columbia University, New York, New York 10027, United States

3. Institut für Festkörperelektronik, Technische Universität Wien, Vienna 1040, Austria

Funder

Deutsche Forschungsgemeinschaft

Fonds de recherche du Qu?bec ? Nature et technologies

Natural Sciences and Engineering Research Council of Canada

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.3c13187

Reference45 articles.

1. Extended van Hove Singularity and Superconducting Instability in Doped Graphene

2. Spectroscopic ellipsometry of graphene and an exciton-shifted van Hove peak in absorption

3. Seeing Many-Body Effects in Single- and Few-Layer Graphene: Observation of Two-Dimensional Saddle-Point Excitons

4. Tuning Many-Body Interactions in Graphene: The Effects of Doping on Excitons and Carrier Lifetimes

5. Resonance Raman Spectrum of Doped Epitaxial Graphene at the Lifshitz Transition

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