Wafer-Scale Carbon Nanotubes Diodes Based on Dielectric-Induced Electrostatic Doping

Author:

Zhang Xinyue12,Sun Pengkun3,Wei Nan3ORCID,Si Jia3ORCID,Li Xiaojing4,Ba Jinhan1,Wang Jiawen1,Qin Dongshun1,Gao Ningfei56,Gao Lei56,Xu Haitao56,Peng Lian-Mao3ORCID,Wang Ying1

Affiliation:

1. Key Laboratory of Luminescence & Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China

2. Jihua Labortatory, Foshan, Guangdong 528200, China

3. Key Laboratory for the Physics and Chemistry of Nanodevices and Research Center for Carbon-based Electronics, School of Electronics, Peking University, Beijing 100871, China

4. Institute of Microelectronics, Chinese Academy of Sciences; Key Laboratory of Science and Technology on Silicon Devices, Chinese Academy of Sciences, Beijing 100029, China

5. Beijing HuaTan YuanXin Electronics Technology Ltd. Co., Beijing, 101399, China

6. Beijing Institute of Carbon-based Integrated Circuits, Beijing, 100195, China

Funder

Jihua Laboratory

Basic and Applied Basic Research Foundation of Guangdong Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

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