Solution-Processed HfOx for Half-Volt Operation of InGaZnO Thin-Film Transistors
Author:
Affiliation:
1. Center of Nanoelectronics, State Key Laboratory of Crystal Materials, and School of Microelectronics, Shandong University, Jinan 250100, China
Funder
Engineering and Physical Sciences Research Council
Ministry of Science and Technology of the People's Republic of China
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00325
Reference56 articles.
1. Flexible and Stretchable Oxide Electronics
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3. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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5. Highly Sensitive Flexible Pressure Sensor by the Integration of Microstructured PDMS Film With a-IGZO TFTs
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