Nanocrystalline and Polycrystalline β-Ga2O3 Thin Films for Deep Ultraviolet Detectors
Author:
Affiliation:
1. Department of Materials Science and Engineering, The University of Texas at Dallas, 800 W. Campbell Road, Richardson, Texas 75080, United States
Funder
Air Force Office of Scientific Research
Consejo Nacional de Ciencia y Tecnolog?a
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00643
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1. Intrinsic electron mobility limits inβ-Ga2O3
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3. Control of the conductivity of Si-doped β-Ga2 O3 thin films via growth temperature and pressure
4. Tunable Electrical and Optical Properties of Nickel Oxide (NiOx) Thin Films for Fully Transparent NiOx–Ga2O3 p–n Junction Diodes
5. All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3
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