Effects of growth cycle number and annealing temperature on Ga2O3-on-quartz solar-blind photodetectors-Reference-Cited by-同舟云学术

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Effects of growth cycle number and annealing temperature on Ga2O3-on-quartz solar-blind photodetectors

Published:2023-09 Issue: Volume:306 Page:128037
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Wang Shaoqing^ORCID,Zhao Yan,Cheng Nini,Ren Yongtao,Liu Xiangtai,Li Lijun,Jia Yifan,Guan Yunhe,Chen Haifeng,Peng Songang

Funder

Shanxi Province Natural Science Foundation

Natural Science Foundation of Shaanxi Province

Natural Science Foundation of Shaanxi Provincial Department of Education

Shanxi Provincial Education Department

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference28 articles.

1. Materials issues and devices of α- and β-Ga2O3;Ahmadi;J. Appl. Phys.,2019

2. Annealing induced phase transition and optical properties of Ga2O3 thin films synthesized by sputtering technique;Meng;Optik,2021

3. High-performance single crystalline UV photodetectors of β-Ga2O3;Zhong;J. Alloys Compd.,2015

4. Investigation of Ga2O3-based deep ultraviolet photodetectors using plasma-enhanced atomic layer deposition system;Chu;Sensors,2020

5. Epitaxial growth of alpha gallium oxide thin films on sapphire substrates for electronic and optoelectronic devices: progress and perspective;Yang;Electron. Mater. Lett.,2022

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