Crystal and Electronic Structure of Oxygen Vacancy Stabilized Rhombohedral Hafnium Oxide-Reference-Cited by-同舟云学术

Crystal and Electronic Structure of Oxygen Vacancy Stabilized Rhombohedral Hafnium Oxide

Published:2023-01-26 Issue:2 Volume:5 Page:754-763
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Kaiser Nico¹^ORCID,Song Young-Joon²^ORCID,Vogel Tobias¹^ORCID,Piros Eszter¹^ORCID,Kim Taewook¹^ORCID,Schreyer Philipp¹^ORCID,Petzold Stefan¹,Valentí Roser²^ORCID,Alff Lambert¹^ORCID

Affiliation:

1. Advanced Thin Film Technology Division, Institute of Materials Science, TU Darmstadt, Alarich-Weiss-Str. 2, 64287Darmstadt, Germany

2. Institute for Theoretical Physics, Goethe-University Frankfurt, Max-von-Laue-Straße 1, 60438Frankfurt am Main, Germany

Funder

Bundesministerium f?r Bildung und Forschung

Deutscher Akademischer Austauschdienst

Deutsche Forschungsgemeinschaft

Horizon 2020 Framework Programme

Electronic Components and Systems for European Leadership

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c01255

Reference50 articles.

1. Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

2. Control of Switching Modes and Conductance Quantization in Oxygen Engineered HfOxbased Memristive Devices

3. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance

4. Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

5. Tailoring the Switching Dynamics in Yttrium Oxide‐Based RRAM Devices by Oxygen Engineering: From Digital to Multi‐Level Quantization toward Analog Switching

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