Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices-Reference-Cited by-同舟云学术

Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices

Published:2019-08-05 Issue:10 Volume:5 Page:1900484
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Petzold Stefan¹^ORCID,Zintler Alexander²^ORCID,Eilhardt Robert²^ORCID,Piros Eszter¹^ORCID,Kaiser Nico¹^ORCID,Sharath Sankaramangalam Ulhas¹^ORCID,Vogel Tobias¹,Major Márton¹^ORCID,McKenna Keith Patrick³^ORCID,Molina‐Luna Leopoldo²^ORCID,Alff Lambert¹^ORCID

Affiliation:

1. Advanced Thin Film Technology DivisionInstitute of Materials ScienceTechnische Universität Darmstadt Alarich‐Weiss‐Straße 2 64287 Darmstadt Germany

2. Advanced Electron Microscopy DivisionInstitute of Materials ScienceTechnische Universität Darmstadt Alarich‐Weiss‐Straße 2 64287 Darmstadt Germany

3. Department of PhysicsThe University of York York YO10 5DD UK

Funder

Electronic Components and Systems for European Leadership

Bundesministerium für Bildung und Forschung

Deutscher Akademischer Austauschdienst

Deutsche Forschungsgemeinschaft

European Research Council

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject