Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO2 Films
Author:
Affiliation:
1. NaMLab gGmbH, Dresden 01187, Germany
2. Department of Applied Sciences and Mechatronics, Munich University of Applied Science, Munich 80335, Germany
3. Chair of Nanoelectronics, TU Dresden, Dresden 01187, Germany
Funder
Deutsche Forschungsgemeinschaft
S?chsisches Staatsministerium f?r Wissenschaft und Kunst
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00608
Reference46 articles.
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4. Application of the ferroelectric materials to ULSI memories
5. Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2
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