Highly Scalable Fe(Ferroelectric)-NAND Cell with MFIS(Metal-Ferroelectric-Insulator-Semiconductor) Structure for Sub-10nm Tera-Bit Capacity NAND Flash Memories-Reference-Cited by-同舟云学术

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Highly Scalable Fe(Ferroelectric)-NAND Cell with MFIS(Metal-Ferroelectric-Insulator-Semiconductor) Structure for Sub-10nm Tera-Bit Capacity NAND Flash Memories

Published:2008 Issue: Volume: Page:
ISSN:
Container-title:2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design
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Author:

Sakai Shigeki,Takahashi Mitsue,Takeuchi Ken,Li Qiu-Hong,Horiuchi Takeshi,Wang Shouyu,Yun Kwi-Young,Takamiya Makoto,Sakurai Takayasu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4531799/4531800/04531836.pdf?arnumber=4531836

Cited by 52 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Ferroelectric Memory;Encyclopedia of Materials: Electronics;2023

3. Memristive/CMOS Devices for Neuromorphic Applications;Springer Handbook of Semiconductor Devices;2022-11-11

4. Efficient Implementation of Max-Pooling Algorithm Exploiting History-Effect in Ferroelectric-FinFETs;IEEE Transactions on Electron Devices;2022-11

5. Influence of Si-Doping on 45 nm Thick Ferroelectric ZrO₂ Films;ACS Applied Electronic Materials;2022-07-05

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