Mechanism of Antiferroelectricity in Polycrystalline ZrO2

Author:

Ganser Richard1ORCID,Lomenzo Patrick D.2,Collins Liam3,Xu Bohan2,Antunes Luis Azevedo1,Mikolajick Thomas24,Schroeder Uwe2,Kersch Alfred1ORCID

Affiliation:

1. Munich University of Applied Sciences Lothstraße 34 80335 Munich Germany

2. NaMLab gGmbH Noethnitzer Str. 64 a 01187 Dresden Germany

3. Center for Nanophase Materials Sciences Oak Ridge National Laboratory Oak Ridge TN 37831 USA

4. TU Dresden Noethnitzer Str. 64 a 01187 Dresden Germany

Abstract

AbstractThe size and electric field dependent induction of polarization in antiferroelectric ZrO2 is the key to several technological applications that are unimaginable a decade ago. However, the lack of a deeper understanding of the mechanism hinders progress. Molecular dynamics simulations of polycrystalline ZrO2, based on machine‐learned interatomic forces with near ab initio quality, shed light on the fundamental mechanism of the size effect on the transition fields. Stress in the oxygen sublattice is the most important factor. The so constructed interatomic forces allow the calculation of the transition fields as a function of the ZrO2 film thickness and predict the ferroelectricity at large thickness. The simulation results are validated with electrical and piezo response force microscopy measurements. The results allow a clear interpretation of the properties of the double‐hysteresis loops as well as the construction of the free energy landscape of ZrO2 grains.

Funder

Deutsche Forschungsgemeinschaft

Publisher

Wiley

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