Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2-Reference-Cited by-同舟云学术

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Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2

Published:2016-09-07 Issue:41 Volume:26 Page:7486-7494
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Pešić Milan¹,Hoffmann Michael¹,Richter Claudia¹,Mikolajick Thomas²,Schroeder Uwe¹

Affiliation:

1. NaMLab gGmbH/TU Dresden; Noethnitzer Str. 64 Dresden D-01187 Germany

2. NaMLab gGmbH and Institute of Semiconductors and Microsytems; TU Dresden; Noethnitzer Str. 64 Dresden D-01187 Germany

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Reference43 articles.

1. A new solid state memory resistor

2. Material Aspects in Emerging Nonvolatile Memories

3. Ferroelectricity in hafnium oxide thin films

4. Ferroelectricity in Simple Binary ZrO2 and HfO2

5. Induction of ferroelectricity in nanoscale ZrO2/HfO2 bilayer thin films on Pt/Ti/SiO2/Si substrates

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2. Ultralow operating voltage for energy conversion performance in Hf1–Zr O2 thin films;Journal of Materiomics;2024-11

3. Phase Stability and Phase Transition Pathways in the Rhombohedral Phase of HfO₂;The Journal of Physical Chemistry Letters;2024-09-05

4. Gate Engineering Effect in Ferroelectric Field‐Effect Transistors with Al‐Doped HfO₂ Thin Film and Amorphous Indium‐Gallium‐Zinc‐Oxide Channel;Advanced Electronic Materials;2024-09-03

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