Low Temperature Modeling of Ni/β-Ga2O3 Schottky Barrier Diode Interface-Reference-Cited by-同舟云学术

Low Temperature Modeling of Ni/β-Ga2O3 Schottky Barrier Diode Interface

Published:2021-08-16 Issue:8 Volume:3 Page:3667-3673
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Labed Madani¹,Park Jun Hui²,Meftah Afak¹,Sengouga Nouredine¹,Hong Jung Yeop³,Jung Young-Kyun³,Rim You Seung²^ORCID

Affiliation:

1. Laboratory of Semiconducting and Metallic Materials (LMSM), University of Biskra, Biskra 07000, Algeria

2. Department of Intelligent Mechatronics Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea

3. Electronic Device Research Team, Research & Development Division, Hyundai Motor Group, Gyeonggi-do 16082, Republic of Korea

Funder

National Research Foundation of Korea

Korea Institute for Advancement of Technology

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.1c00647

Reference25 articles.

1. A review of Ga2O3materials, processing, and devices

2. Perspective: Ga2O3for ultra-high power rectifiers and MOSFETS

3. Simulation study of reduced self-heating in β-Ga2O3 MOSFET on a nano-crystalline diamond substrate

4. Leakage Current Modelling and Optimization of β-Ga 2 O 3 Schottky Barrier Diode with Ni Contact under High Reverse Voltage

5. β-Ga2O3 for wide-bandgap electronics and optoelectronics

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