AlOx Thin Films Synthesized by Mist Chemical Vapor Deposition, Monitored by a Fast-Scanning Mobility Particle Analyzer, and Applied as a Gate Insulating Layer in the Field-Effect Transistors-Reference-Cited by-同舟云学术

AlOx Thin Films Synthesized by Mist Chemical Vapor Deposition, Monitored by a Fast-Scanning Mobility Particle Analyzer, and Applied as a Gate Insulating Layer in the Field-Effect Transistors

Published:2021-01-15 Issue:2 Volume:3 Page:658-667
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Rajib Arifuzzaman¹^ORCID,Kuddus Abdul¹^ORCID,Shida Tomohiro¹,Ueno Keiji¹,Shirai Hajime¹

Affiliation:

1. Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan

Funder

Japan Society for the Promotion of Science

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00758

Reference50 articles.

1. Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric

2. GaN as an Interfacial Passivation Layer: Tuning Band Offset and Removing Fermi Level Pinning for III–V MOS Devices

3. Fully Transparent Thin-Film Transistor Devices Based on SnO2 Nanowires

4. Poly(3-hexylthiophene) field-effect transistors with high dielectric constant gate insulator

5. Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics

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