GaN as an Interfacial Passivation Layer: Tuning Band Offset and Removing Fermi Level Pinning for III

GaN as an Interfacial Passivation Layer: Tuning Band Offset and Removing Fermi Level Pinning for III–V MOS Devices

Published:2015-02-25 Issue:9 Volume:7 Page:5141-5149
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zhang Zhaofu¹,Cao Ruyue¹,Wang Changhong¹,Li Hao-Bo¹,Dong Hong¹,Wang Wei-hua¹,Lu Feng¹,Cheng Yahui¹,Xie Xinjian²,Liu Hui¹,Cho Kyeongjae³,Wallace Robert³,Wang Weichao¹³

Affiliation:

1. College of Electronic Information and Optical Engineering, Nankai University, 300071 Tianjin, P. R. China

2. College of Materials Science, Hebei Technology University, 300401 Tianjin, P. R. China

3. Department of Materials Science & Engineering, The University of Texas at Dallas, Richardson, Texas 75080, United States

Funder

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Natural Science Foundation of Tianjin Municipality

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am507287f

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5. High-κ gate dielectrics: Current status and materials properties considerations

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