Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric-Reference-Cited by-同舟云学术

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Top-Gate ZnO Nanowire Transistors and Integrated Circuits with Ultrathin Self-Assembled Monolayer Gate Dielectric

Published:2011-10-26 Issue:12 Volume:11 Page:5309-5315
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Kälblein Daniel¹,Weitz R. Thomas¹,Böttcher H. Jens²,Ante Frederik¹,Zschieschang Ute¹,Kern Klaus¹³,Klauk Hagen¹

Affiliation:

1. Max Planck Institute for Solid State Research, 70569 Stuttgart, Germany

2. Department of Physical Chemistry, University of Hamburg, 20146 Hamburg, Germany

3. Institut de Physique de la Matière Condensée, École Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl202767h

Reference30 articles.

1. CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach

2. High-Performance Nanowire Electronics and Photonics on Glass and Plastic Substrates

3. Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates

4. Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

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