Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics-Reference-Cited by-同舟云学术

Aqueous Solution-Deposited Gallium Oxide Dielectric for Low-Temperature, Low-Operating-Voltage Indium Oxide Thin-Film Transistors: A Facile Route to Green Oxide Electronics

Published:2015-06-30 Issue:27 Volume:7 Page:14720-14725
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Xu Wangying¹,Cao Hongtao²,Liang Lingyan²,Xu Jian-Bin¹

Affiliation:

1. Department of Electronic Engineering, Materials Science and Technology Research Center, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China

2. Division of Functional Materials and Nano Devices, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, China

Funder

Research Grants Council, University Grants Committee, Hong Kong

National Natural Science Foundation of China

Chinese University of Hong Kong

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.5b02451

Reference39 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances