GaN Single Nanowire p–i–n Diode for High-Temperature Operations
Author:
Affiliation:
1. ECE Department, Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong
2. School of Information Science and Technology, ShanghaiTech University, Shanghai 201210, China
Funder
Research Grants Council, University Grants Committee
Shanghai Municipal Education Commission
Science and Technology Commission of Shanghai Municipality
ShanghaiTech University
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00801
Reference45 articles.
1. p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche Photodiodes
2. Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD
3. Characterization of the Interfacial Toughness in a Novel “GaN-on-Diamond” Material for High-Power RF Devices
4. Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride
5. Effect of Bias on the Response of GaN Axial p–n Junction Single-Nanowire Photodetectors
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