Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride
Author:
Affiliation:
1. Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China
Funder
Ministry of Science and Technology of the People's Republic of China
Shenzhen Science and Technology Innovation Commission
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.8b00102
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1. GaN-on-Si Power Technology: Devices and Applications
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5. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
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