Optimizing Threshold Voltage Performance in AlGaN/GaN MIS-HEMTs through GaON Integration-Reference-Cited by-同舟云学术

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Optimizing Threshold Voltage Performance in AlGaN/GaN MIS-HEMTs through GaON Integration

Published:2023-11-25 Issue: Volume: Page:292-297
ISSN:
Container-title:2023 IEEE 9th International Women in Engineering (WIE) Conference on Electrical and Computer Engineering (WIECON-ECE)
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Author:

Noman Abu Nayem Md.¹,Majumder Pranesh²,Sarkar Uchchhash²,Karmaker Susmita²

Affiliation:

1. Chittagong University of Engineering & Technology,Department of EEE,Chattogram,Bangladesh,4349

2. Ahsanullah University of Science and Technology,Department of EEE,Dhaka,Bangladesh,1208

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10456368/10456369/10456403.pdf?arnumber=10456403

Reference15 articles.

1. A survey of Gallium Nitride HEMT for RF and high power applications

2. A Study on the Optimized Ohmic Contact Process of AlGaN/GaN-Si MIS-HEMTs

3. First demonstration of RF N-polar GaN MIS-HEMTs grown on bulk GaN using PAMBE

4. GaN-Based RF Power Devices and Amplifiers

5. Wide-Bandgap-Based Power Devices: Reshaping the power electronics landscape

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