Recent development in flourine-ion-implanted GaN-based heterojunction power devices
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx7/6683942/6695542/06695570.pdf?arnumber=6695570
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A novel E-mode GaN p-MOSFET featuring charge storage layer with high current density;Journal of Physics D: Applied Physics;2022-09-30
2. High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V;Applied Physics Express;2021-01-01
3. Enhanced Gate Reliability in GaN MIS-FETs by Converting the GaN Channel into Crystalline Gallium Oxynitride;ACS Applied Electronic Materials;2019-04-11
4. Ion-Induced Electrical Isolation in GaN-Based Platform for Applications in Integrated Photonics;IEEE Access;2019
5. An investigation of the influence of different transparent conducting oxide substrates/front contacts on the performance of CdS/CdTe thin-film solar cells;Journal of Materials Science: Materials in Electronics;2017-09-01
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