Fabrication and photoresponsive characteristics of ultraviolet GaN p-i-n photodetector based AlN:Al2O3 passive layer-Reference-Cited by-同舟云学术

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Fabrication and photoresponsive characteristics of ultraviolet GaN p-i-n photodetector based AlN:Al2O3 passive layer

Published:2024-03 Issue: Volume:149 Page:115055
ISSN:0925-3467
Container-title:Optical Materials
language:en
Short-container-title:Optical Materials

Author:

Mohammad Furqan Khairi,Ramizy Asmiet^ORCID,Ahmed Naser M.^ORCID,Yam Fong Kwong,Hassan Zainuriah^ORCID,Beh Khi Poay

Publisher

Elsevier BV

Reference41 articles.

1. Fabrication and characterization of porous Si/CuO film for visible light MSM photodetector: the effect of post-processing temperature;Salih;Ceram. Int.,2022

2. The impact of laser energy on the photoresponsive characteristics of CdO/Si visible light photodetector;Bashir;J. Micromech. Microeng.,2022

3. Rapid fabrication of fast response CdS/Si visible light photodetector: influence of laser energy;Aldaghri;Results Phys.,2023

4. Preparation and photovoltaic evaluation of CuO@ Zn (Al) O-mixed metal oxides for dye sensitized solar cell;Bashir;Nanomaterials,2023

5. Rapid synthesis of hexagonal-shaped Zn (Al) O-MMO nanorods for dye-sensitized solar cell Using Zn/Al-LDH as precursor;Salih;Nanomaterials,2022

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