Affiliation:
1. College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices Nanjing University of Aeronautics and Astronautics Nanjing 211106 P. R. China
2. Peter Grünberg Research Centre, College of Telecommunications and Information Engineering Nanjing University of Posts and Telecommunications Nanjing 211106 P. R. China
3. Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers Fudan University Shanghai 200433 P. R. China
Abstract
AbstractTo realize the advantageous combination of microelectronic integrated circuit technology and photonic technology, the development of high‐speed, low‐power, and chip‐integrated photodetection devices is extremely critical. Here, a large‐scale on‐chip integration photodetector array on a Si wafer consisting of 21×21 GaN p‐n homojunction pixels is prepared. The GaN homojunction subunit has significant photovoltaic performance at a bias voltage of 0 V, including high responsivity of 229.5 mA W−1, outstanding specific detectivity of 2.46×1013 Jones (360 nm, 45.7 µW cm−2), and fast response speed of 240/290 µs. Especially, external quantum efficiency can reach 94% in the faint UV illumination at 0 V bias. The excellent photoresponse is confirmed by finite element analysis, which is resulted from an oversized built‐in potential at the p‐n homojunction interface. For exploring potential practical applicability of the device, the full range of active pixels is statistically analyzed. It is confirmed that the small relative deviation of the GaN array is extremely favorable for obtaining high‐resolution imaging capability. Moreover, the prepared device can be used as an optical data receiver for UV optical communication. With compatibility and integrability to Si‐based optoelectronics platforms, the devices are appealing for sensing, imaging and communications.
Funder
National Natural Science Foundation of China