On the Control of the Fixed Charge Densities in Al2O3-Based Silicon Surface Passivation Schemes
Author:
Affiliation:
1. NaMLab gGmbH, Nöthnitzer Strasse 64, D-01187 Dresden, Germany
2. Chair of Nanoelectronic Materials, TU Dresden, D-01062 Dresden, Germany
Funder
Bundesministerium für Bildung und Forschung
Bundesministerium für Umwelt, Naturschutz und Reaktorsicherheit
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.5b06606
Reference59 articles.
1. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3
2. Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD
3. Atomic layer deposition for photovoltaics: applications and prospects for solar cell manufacturing
4. Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
5. Hydrogen induced passivation of Si interfaces by Al2O3 films and SiO2/Al2O3 stacks
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