Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4709729
Reference58 articles.
1. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
2. Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
3. High efficiency n-type Si solar cells on Al2O3-passivated boron emitters
4. Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3
5. On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3
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