Molecular Beam Epitaxy of Two-Dimensional GaTe Nanostructures on GaAs(001) Substrates: Implication for Near-Infrared Photodetection-Reference-Cited by-同舟云学术

Molecular Beam Epitaxy of Two-Dimensional GaTe Nanostructures on GaAs(001) Substrates: Implication for Near-Infrared Photodetection

Published:2021-08-19 Issue:9 Volume:4 Page:8913-8921
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Huynh Sa Hoang¹^ORCID,Diep Nhu Quynh¹^ORCID,Le Tan Vinh¹,Wu Ssu Kuan¹,Liu Cheng Wei¹,Nguyen Duc Loc¹,Wen Hua Chiang¹,Chou Wu Ching¹,Le Van Qui²,Vu Thanh Tra³

Affiliation:

1. Department of Electrophysics, College of Sciences, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

2. Department of Materials Science and Engineering, College of Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan

3. Department of Physics Education, Can Tho University, Can Tho 94155, Vietnam

Funder

Ministry of Science and Technology, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.1c01544

Reference38 articles.

1. Synthesis and emerging properties of 2D layered III–VI metal chalcogenides

2. Recent Progress in 2D Layered III–VI Semiconductors and their Heterostructures for Optoelectronic Device Applications

3. High-Sensitivity Photodetectors Based on Multilayer GaTe Flakes

4. Pulsed Laser Deposition of Photoresponsive Two-Dimensional GaSe Nanosheet Networks

5. Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse

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