Growth Mode Transition in Two-Dimensional GaSe on Three-Dimensional GaN/Sapphire Platform: Implication for Self-Powered Photodetection-Reference-Cited by-同舟云学术

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Growth Mode Transition in Two-Dimensional GaSe on Three-Dimensional GaN/Sapphire Platform: Implication for Self-Powered Photodetection

Published:2024-01-20 Issue:3 Volume:7 Page:3042-3049
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Diep Nhu Quynh¹^ORCID,Tran Quynh Trang¹,Huynh Thi Bich Tuyen¹,Wen Hua Chiang¹,Chou Wu Ching¹,Huynh Sa Hoang¹,Le Van Qui²,Chu Ying Hao²^ORCID,Vu Thanh Tra³

Affiliation:

1. Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 300093, Taiwan, R.O.C.

2. Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300044, Taiwan, R.O.C.

3. Department of Physics, School of Education, Can Tho University, Can Tho 90000, Vietnam

Funder

National Science and Technology Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c05343

Reference39 articles.

1. Synthesis and emerging properties of 2D layered III–VI metal chalcogenides

2. Large-grain MBE-grown GaSe on GaAs with a Mexican hat-like valence band dispersion

3. Large-Area Growth and Stability of Monolayer Gallium Monochalcogenides for Optoelectronic Devices

4. Solution‐Processed GaSe Nanoflake‐Based Films for Photoelectrochemical Water Splitting and Photoelectrochemical‐Type Photodetectors

5. Photodetector Arrays Based on MBE‐Grown GaSe/Graphene Heterostructure

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