Photodetector Arrays Based on MBE‐Grown GaSe/Graphene Heterostructure-Reference-Cited by-同舟云学术

Photodetector Arrays Based on MBE‐Grown GaSe/Graphene Heterostructure

Published:2022-06-19 Issue:18 Volume:10 Page:2200332
ISSN:2195-1071
Container-title:Advanced Optical Materials
language:en
Short-container-title:Advanced Optical Materials

Author:

Saroj Rajendra K.¹²^ORCID,Guha Puspendu¹²,Lee Sangmin²³,Yoo Dongha¹²,Lee Eunsu²,Lee Jamin²⁴,Kim Miyoung³,Yi Gyu‐Chul¹²^ORCID

Affiliation:

1. Department of Physics and Astronomy Institute of Applied Physics and Research Institute of Advanced Materials Seoul National University Seoul 151‐747 Republic of Korea

2. Research Center for Novel Epitaxial Quantum Architectures Seoul National University 1, Gwanak‐ro, Gwanak‐gu Seoul 08826 Republic of Korea

3. Department of Materials Science and Engineering Seoul National University 1, Gwanak‐ro, Gwanak‐gu Seoul 08826 Republic of Korea

4. Interdisciplinary Program in Brain Science College of Science Seoul National University 1, Gwanak‐ro, Gwanak‐gu Seoul 08826 Republic of Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adom.202200332

Reference40 articles.

1. Graphene is on track to deliver on its promises

2. High-Mobility Epitaxial Graphene on Ge/Si(100) Substrates

3. High Mobility Flexible Graphene Field-Effect Transistors with Self-Healing Gate Dielectrics

4. Band gap formation in graphene by in-situ doping

5. 2D Nanomaterial Arrays for Electronics and Optoelectronics

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